image
Home Journals Journal of Inorganic Materials
Journal of Inorganic Materials

Abbreviation (ISO4): J Inorg Mat      Editor in chief: Lidong CHEN

About  /  Aim & scope  /  Editorial board  /  Indexed  /  Contact  / 
Online first  /  Current issue  /  All issues  /  Top access  /  RSS

Journal of Inorganic Materials >

0 0

DOI: https://doi.org/10.15541/jim20240190

Simultaneous Optimization of Electrical and Thermal Transport Properties of BiSbSe1.50Te1.50 Thermoelectrics by Hot Deformation

Expand
  • 1. Key Laboratory of Solidification Control and Digital Preparation Technology,School of Materials Science and Engineering, Dalian 116024, China;
    2. Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
TIAN Zhen (1994-), male, PhD candidate. E-mail: drtianzhen@mail.dlut.eud.cn

Received date: 2024-04-12

  Revised date: 2024-06-06

  Online published: 2024-07-03

Supported by

National Natural Science Foundation of China (52271025, 51927801, U22A20174); Science and Technology Planning Project of Liaoning Province(2023JH2/101700295); Innovation Foundation of Science and the Technology of Dalian (No. 2023JJ12GX021).

Fold

Abstract

As a typical multi-layered compound thermoelectric material, BiSbSe1.50Te1.50, can be utilized to fabricate p-n junctions with the same chemical composition. It has great potential in the development and design of high-performance TE devices due to its ability to avoid lattice mismatch incompatibility and harmful band misalignment. However, the TE performance of n-type BiSbSe1.50Te1.50 is limited due to the poor electrical transport properties, which hinders its further application in TE devices. Therefore, it is of great significance to improve the thermoelectric (TE) performance by enhancing the electrical transport properties while maintaining low thermal conductivity. In this work, a series of n-type BiSbSe1.50Te1.50 hot deformation samples were prepared by solid-state reaction combined with hot pressed (HP) sintering. It is found that the preferred orientation and nanoscale lamellar structures with large surface areas form in hot-deformed samples. The donor-like effect elevates the carrier concentration, while these lamellar structures facilitate higher carrier mobility by providing expressways for carriers, giving rise to the enhanced electrical conductivity. Additionally, various and abundant multiscale defects are introduced into samples, evoking strong phonon scattering with different frequency and thus lowering the thermal conductivity. The electrical and thermal transport properties have been synergistically optimized by hot deformation, realizing the improvement of TE properties for n-type BiSbSe1.50Te1.50. As a result, a peak ZT of 0.50 at 500 K is achieved for the hot-deformed sample, increased almost ~138% compared to the undeformed sample (0.29). This work establishes a foundation for further advancement of the preparation for BiSbSe1.50Te1.50 TE devices with high conversion efficiency and homogeneous structure.

Key words： n-type BiSbSe1.50Te1.50; thermoelectric material; hot deformation; synergistical optimization

Cite this article

TIAN Zhen, JIANG Quanwei, LI Jianbo, YU Lifeng, KANG Huijun, WANG Tongmin . Simultaneous Optimization of Electrical and Thermal Transport Properties of BiSbSe1.50Te1.50 Thermoelectrics by Hot Deformation[J]. Journal of Inorganic Materials, 0 : 0 . DOI: 10.15541/jim20240190

References

[1] TIAN Z, WANG J, XIN B Y,et al. Pencil painting like preparation for flexible thermoelectric material of high-performance p-type Na1.4Co2O4 and novel n-type NaxCo2O4. Journal of Materiomics, 2021, 7(5): 1153.
[2] LI Z, XIAO C, XIE Y.Layered thermoelectric materials: structure, bonding, and performance mechanisms.Applied Physics Reviews, 2022, 9(1): 011303.
[3] MAO J, CHEN G, REN Z F.Thermoelectric cooling materials.Nature Materials, 2020, 20(4): 454.
[4] ZHAO Y L, CHENG H L, LI Y X,et al. Quasi-solid conductive gels with high thermoelectric properties and high mechanical stretchability consisting of a low cost and green deep eutectic solvent. Journal of Materials Chemistry A, 2022, 10(8): 4222.
[5] BELL L E.Cooling, heating, generating power, and recovering waste heat with thermoelectric systems.Science, 2008, 321(5895): 1457.
[6] WANG S N, WANG D Y, SU L Z,et al. Realizing synergistic optimization of thermoelectric properties in n-type BiSbSe3 polycrystals via co-doping zirconium and halogen. Materials Today Physics, 2022, 22: 100608.
[7] ZHANG T D, DENG S P, ZHAO X D,et al. Regulation of Ge vacancies through Sm doping resulting in superior thermoelectric performance in GeTe. Journal of Materials Chemistry A, 2022, 10(7): 3698.
[8] ZHANG X, ZHAO L D.Thermoelectric materials: energy conversion between heat and electricity.Journal of Materiomics, 2015, 1(2): 92.
[9] HU L P, WU H J, ZHU T J,et al. Tuning multiscale microstructures to enhance thermoelectric performance of n‐type bismuth‐telluride‐based solid solutions. Advanced Energy Materials, 2015, 5(17): 1500411.
[10] HU L P, GAO H L, LIU H L,et al. Enhancement in thermoelectric performance of bismuth telluride based alloys by multi-scale microstructural effects. Journal of Materials Chemistry, 2012, 22(32): 16484.
[11] XIE H H, YU C, ZHU T J,et al. Increased electrical conductivity in fine-grained (Zr,Hf)NiSn based thermoelectric materials with nanoscale precipitates. Applied Physics Letters, 2012, 100(25): 254104.
[12] QIU P F, YANG J, HUANG X Y,et al. Effect of antisite defects on band structure and thermoelectric performance of ZrNiSn half-Heusler alloys. Applied Physics Letters, 2010, 96(15): 152105.
[13] DASGUPTA T, STIEWE C, HASSDORF R,et al. Effect of vacancies on the thermoelectric properties of Mg2Si1-xSbx(0?x?0.1). Physical Review B, 2011, 83(23): 235207.
[14] HU L P, ZHU T J, LIU H L,et al. Point defect engineering of high-performance bismuth-telluride-based thermoelectric materials. Advanced Functional Materials, 2014, 24(33): 5211.
[15] GAO H T, ZHAO K P, WU L H X G,et al. Adaptable sublattice stabilized high-entropy materials with superior thermoelectric performance. Energy Environmental Science, 2023, 16(12): 6046.
[16] YU Y, HE D S, ZHANG S Y,et al. Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3 thermoelectric alloy by twin boundary engineering. Nano Energy, 2017, 37: 203.
[17] QIN B C, ZHANG Y, WANG D Y,et al. Ultrahigh average ZT realized in p-type SnSe crystalline thermoelectrics through producing extrinsic vacancies. Journal of the American Chemical Society, 2020, 142(12): 5901.
[18] JIANG B B, YONG Y. CUI J, et al. High-entropy-stabilized chalcogenides with high thermoelectric performance. Science, 2021, 371(6531): 830.
[19] POPURI S R, POLLET M, DECOURT R,et al. Large thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe. Journal of Materials Chemistry C, 2016, 4(8): 1685.
[20] FU C G, ZHU T J, LIU Y T,et al. Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit ZT > 1. Energy Environmental Science, 2015, 8(1): 216.
[21] CHEN H, FAN W H, AN D C,et al. Improvement of thermoelectric performance of SnTe by energy band optimization and carrier regulation. Journal of Inorganic Materials, 2024, 39(3): 306.
[22] SUI J H, LI J, HE J Q,et al. Texturation boosts the thermoelectric performance of BiCuSeO oxyselenides. Energy Environmental Science, 2013, 6(10): 2916.
[23] HU L P, ZHU T J, WANG Y G,et al. Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction. NPG Asia Materials, 2014, 6(2): 88.
[24] YAN X, POUDEL B, MA Y,et al. Experimental studies on anisotropic thermoelectric properties and structures of n-Type Bi2Te2.7Se0.3. Nano Letters, 2010, 10(9): 3373.
[25] ZHANG L J, WANG J L, SUN Q,et al. Three‐stage inter‐orthorhombic evolution and high thermoelectric performance in Ag‐doped nanolaminar SnSe polycrystals. Advanced Energy Materials, 2017, 7(19): 1700573.
[26] CHENG C, LI J B, TIAN Z, et al. Thermoelectric property of In2O3/InNbO4 composites. Journal of Inorganic Materials, 2022, 37(7): 724.
[27] LU X, HOU J, ZHANG Q,et al. Effect of Mg content on thermoelectric property of Mg3(1+z)Sb2 compounds. Journal of Inorganic Materials, 2021, 36(8): 835.
[28] SHEN D Y, CHENG R H, WANG W W,et al. Enhanced thermoelectric performance of p-type Bi2Si2Te6 enabled via synergistically optimizing carrier concentration and suppressing bipolar effect. Materials Today Physics, 2023 37: 101185.
[29] LUO Y B, MA Z, HAO S Q,et al. Thermoelectric performance of the 2D Bi2Si2Te6 semiconductor. Journal of the American Chemical Society, 2022, 144(3): 1445.
[30] MADAR N, GIVON Y, MOGILYANSKY D,et al. High thermoelectric potential of Bi2Te3 alloyed GeTe-rich phases. Journal of Applied Physics, 2016, 120(3): 035102.
[31] LUO Y B, YANG J Y, LI G, Enhancement of the thermoelectric performance of polycrystalline In4Se2.5 by copper intercalation and bromine substitution.Advanced Energy Materials, 2014, 4(2): 1300599.
[32] YELGEL O C, SRIVASTAVA G P.Thermoelectric properties of n-type Bi2(Te0.85Se0.15)3 single crystals doped with CuBr and SbI3.Physical Review B, 2012, 85(12): 125207.
[33] SHUAI J, KIM H S, LAN Y C.Study on thermoelectric performance by Na doping in nanostructured Mg1-xNaxAg0.97Sb0.99. Nano Energy, 2015, 11(12): 640.
[34] MATARE H F.Carrier transport at grain boundaries in semiconductors.Journal of Applied Physics, 1984, 56(10): 2605.
[35] SETO J Y W. The electrical properties of polycrystalline silicon films.Journal of Applied Physics, 1975, 46(12): 5247.
[36] PIKE G E, SEAGER C H.The DC voltage dependence of semiconductor grain-boundary resistance.Journal of Applied Physics, 1979, 50(5): 3414.
[37] MAY A F, SNYDER G J. Materials, Preparation,Characterization in Thermoelectrics. Abingdon: Taylor & Francis, 2012: K1-K18.
[38] SCHELLING P K, PHILLPOT S R, KEBLINSKI P.Kapitza conductance and phonon scattering at grain boundaries by simulation.Journal of Applied Physics, 2004, 95(11): 6082.
[39] POLLACK, GERALD L.Kapitza resistance.Reviews of Modern Physics, 1969, 41(1): 48.
[40] NARDUCCI D, SELEZNEVA E, CEROFOLINI G,et al. Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors. Journal of Solid State Chemistry, 2012, 193: 19.
[41] LIN Y, WOOD M, IMASATO K,et al. Expression of interfacial Seebeck coefficient through grain boundary engineering with multi-layer graphene nanoplatelets. Energy Environmental Science, 2020, 13(11): 4114.
[42] ZHAO L D, ZHANG B P, LI J F,et al. Enhanced thermoelectric and mechanical properties in textured n-type Bi2Te3 prepared by spark plasma sintering. Solid State Sciences, 2008, 10(5): 651.
[43] SCHULTZ J M, MCHUGH J P, TILLER W A.Effects of heavy deformation and annealing on the electrical properties of Bi2Te3.Journal of Applied Physics, 1962, 33(8): 2443.
[44] LI Q, CHEN S, LIU K K,et al. Donor-like effect and thermoelectric properties in n-type Bi2Te3-based compounds. Acta Physica Sinica, 2023, 72(9): 097101.
[45] TOBERER E S, ZEVALKINK A, Crisosto N,et al. The Zintl compound Ca5Al2Sb6 for low‐cost thermoelectric power generation. Advanced Functional Materials, 2010, 20(24): 4375.
[46] ZHOU Z F, ZHENG Y P, YANG Y Y,et al. Optimized weighted mobility induced high thermoelectric performance of ZnO‐based multilayered thin films. Journal of the American Ceramic Society, 2022, 106(5): 2911.
[47] SNYDER G J, SNYDER A H, WOOD M,et al. Weighted mobility. Advanced Materials, 2020, 32(25): 2001537.
[48] GONG Y R, ZHANG S H, HOU Y X,et al. Enhanced density of states facilitates high thermoelectric performance in solution-grown Ge- and In-codoped SnSe nanoplates. ACS Nano, 2022, 17(1): 801.
[49] XIAO Y, WANG D Y, ZHANG Y,et al. Band sharpening and band alignment enable high quality factor to enhance thermoelectric performance in n-type PbS. Journal of the American Chemical Society, 2020, 142(8): 4051.
Options
Outlines

/

〈 〉